Specification	SI5853DDC-T1-E3

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	320 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power Dissipation (Max)	1.3 W, 3.1 W
Rds On (Max)	105 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SI5853 Series

Part	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	FET Feature	Power Dissipation (Max)	Package / Case	Mounting Type	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	FET Type	Vgs (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI5853DDC-T1-E3	20 V	-55 °C	150 °C	12 nC	320 pF	Schottky Diode (Isolated)	1.3 W 3.1 W	8-SMD Flat Leads	Surface Mount	1 V	1206-8 ChipFET™	4 A	P-Channel	8 V	MOSFET (Metal Oxide)	4.5 V	1.8 V	105 mOhm
Vishay Dale SI5853DC-T1-E3	20 V	-55 °C	150 °C	7.7 nC		Schottky Diode (Isolated)	1.1 W	8-SMD Flat Leads	Surface Mount	1 V	1206-8 ChipFET™		P-Channel	8 V	MOSFET (Metal Oxide)	4.5 V	1.8 V	110 mOhm	2.7 A
Vishay Dale SI5853CDC-T1-E3	20 V	-55 °C	150 °C	11 nC	350 pF	Schottky Diode (Isolated)	1.5 W 3.1 W	8-SMD Flat Leads	Surface Mount	1 V	1206-8 ChipFET™	4 A	P-Channel	8 V	MOSFET (Metal Oxide)	4.5 V	1.8 V	104 mOhm

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