Specification	SQJ940EP-T1_GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	15 A
Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Max)	20 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	896 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Package Name	PowerPAK® SO-8 Dual Asymmetric
Power - Max (Value 1)	48 W
Power - Max (Value 2)	43 W
Qualification	AEC-Q101
Rds On (Max)	16 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SQJ940 Series

Part	Package / Case	Vgs(th) (Max)	Package Name	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Power - Max (Value 2)	Power - Max (Value 1)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Channel Count	Configuration	Configuration - Features	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Technology	Qualification	Gate Charge (Max)
Vishay Dale SQJ940EP-T1_GE3	PowerPAK® SO-8 Dual	2.5 V	PowerPAK® SO-8 Dual Asymmetric	Logic Level Gate	40 V	18 A	15 A	Surface Mount	43 W	48 W	896 pF	16 mOhm	2	N-Channel	Dual	-55 °C	175 °C	Automotive	MOSFET (Metal Oxide)	AEC-Q101	20 nC

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