EMH4FHAT2R
NRNDRohm Semiconductor
BIPOLAR TRANSISTORS - BJT NPN+NPN DIGITAL TRANSISTOR (CORRESPONDS TO AEC-Q101)
EMH4FHAT2R
NRNDRohm Semiconductor
BIPOLAR TRANSISTORS - BJT NPN+NPN DIGITAL TRANSISTOR (CORRESPONDS TO AEC-Q101)
Description
General part information
EMH4FHAT2 Series
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
Technical Specifications
Parameters and characteristics for this part
| Specification | EMH4FHAT2R |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 250 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| NPN Count | 2 |
| Package / Case | SOT-563, SOT-666 |
| Package Name | EMT6 |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) Resistance | 10 kOhm |
| Transistor Configuration | Dual, Pre-Biased |
| Transistor Type | NPN |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available