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STL16N65M2 - 8PowerVDFN

STL16N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.325 OHM TYP., 7.5 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetAN4742+25
STL16N65M2 - 8PowerVDFN

STL16N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.325 OHM TYP., 7.5 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

Deep-Dive with AI

DocumentsDatasheetAN4742+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL16N65M2
Current - Continuous Drain (Id) @ 25°C7.5 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19.5 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]56 W
Rds On (Max) @ Id, Vgs395 mOhm
Supplier Device PackagePowerFlat™ (5x6) HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.21
10$ 1.84
100$ 1.46
500$ 1.24
1000$ 1.05
Digi-Reel® 1$ 2.21
10$ 1.84
100$ 1.46
500$ 1.24
1000$ 1.05
Tape & Reel (TR) 3000$ 1.00
6000$ 0.96
9000$ 0.93

Description

General part information

STL16N65M2 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.