APTML202UM18R010T3AG

Obsolete

Microsemi Corporation

MOSFET 2N-CH 200V 109A SP3

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Obsolete

Microsemi Corporation

MOSFET 2N-CH 200V 109A SP3

Technical Specifications

Parameters and characteristics for this part

Specification	APTML202UM18R010T3AG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	109 A
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds [Max]	9880 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP3
Power - Max [Max]	480 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	SP3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Mounting Type
Microsemi Corporation APTML202UM18R010T3AG	SP3	19 mOhm	4 V	150 °C	-40 °C	9880 pF	MOSFET (Metal Oxide)	2 N-Channel (Dual)	200 V	SP3	109 A	480 W	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 200V 109A (Tc) 480W Chassis Mount SP3

Technical documentation and resources

No documents available