IXTP2R4N50P

Obsolete

IXYS

MOSFET N-CH 500V 2.4A TO220AB

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Obsolete

IXYS

MOSFET N-CH 500V 2.4A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP2R4N50P

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.1 nC
Input Capacitance (Ciss) (Max) @ Vds	240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	55 W
Rds On (Max) @ Id, Vgs	3.75 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
IXYS IXTP2N80P	N-Channel	440 pF	30 V	-55 °C	150 °C	800 V	2 A	70 W	MOSFET (Metal Oxide)	TO-220-3	5.5 V	6 Ohm	10.6 nC	Through Hole	TO-220-3	10 V
IXYS IXTP2R4N50P	N-Channel	240 pF	30 V	-55 °C	150 °C	500 V	2.4 A		MOSFET (Metal Oxide)	TO-220-3	5.5 V	3.75 Ohm	6.1 nC	Through Hole	TO-220-3	10 V	55 W
IXYS IXTP2N60P	N-Channel	240 pF	30 V	-55 °C	150 °C	600 V	2 A		MOSFET (Metal Oxide)	TO-220-3	5 V	5.1 Ohm		Through Hole	TO-220-3	10 V	55 W	7 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 2.4A (Tc) 55W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available