AOB20S60L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO263

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Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB20S60L

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1038 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	266 W
Rds On (Max) @ Id, Vgs	199 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.1 V

MOSFET N-CH 600V 20A TO263

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOB20S60L	MOSFET (Metal Oxide)	1038 pF	4.1 V	-55 °C	150 °C	600 V	30 V	266 W	N-Channel	199 mOhm	19.8 nC	10 V	Surface Mount	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	20 A	TO-263 (D2PAK)

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