SPA15N65C3XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 15A TO220-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 650V 15A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPA15N65C3XKSA1

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	34 W
Rds On (Max) @ Id, Vgs	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type
Infineon Technologies SPA15N65C3XKSA1	15 A	TO-220-3 Full Pack	10 V	MOSFET (Metal Oxide)	Through Hole	63 nC	650 V	-55 °C	150 °C	3.9 V	1600 pF	20 V	280 mOhm	34 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 15A (Tc) 34W (Tc) Through Hole PG-TO220-3-31

Technical documentation and resources