WND10P08YQ

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WeEn Semiconductors

DIODE GP 800V 10A IITO220-2

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WeEn Semiconductors

DIODE GP 800V 10A IITO220-2

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	WND10P08YQ	WND10 Series

Current - Average Rectified (Io)	10 A	10 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction	150 ¯C	150 ¯C
Package / Case	TO-220-2	TO-220-2 Full Pack, Isolated Tab, TO-220-2
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	IITO-220-2	TO-220F, IITO-220-2
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V	600 - 800 V
Voltage - Forward (Vf) (Max) @ If	1.3 V	1.3 - 980 V

DIODE GEN PURP 800V 10A TO220F

Part	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Technology	Speed	Speed	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case
WeEn Semiconductors WND10P08XQ	TO-220F	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	1.3 V	800 V	10 µA	TO-220-2 Full Pack, Isolated Tab
WeEn Semiconductors WND10P08YQ	IITO-220-2	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	1.3 V	800 V	10 µA	TO-220-2
WeEn Semiconductors WND10M600XQ	TO-220F	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	980 mV	600 V	10 µA	TO-220-2 Full Pack, Isolated Tab

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 10A Through Hole IITO-220-2

Technical documentation and resources

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