WND10P08XQ

Active

WeEn Semiconductors

DIODE GEN PURP 800V 10A TO220F

Search across all available documentation for this part.

Active

WeEn Semiconductors

DIODE GEN PURP 800V 10A TO220F

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 10A Through Hole TO-220F

Technical documentation and resources

No documents available

Specification	WND10P08XQ	WND10 Series

Current - Average Rectified (Io)	10 A	10 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction	150 ¯C	150 ¯C
Package / Case	TO-220-2 Full Pack, Isolated Tab	TO-220-2 Full Pack, Isolated Tab, TO-220-2
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	TO-220F	TO-220F, IITO-220-2
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V	600 - 800 V
Voltage - Forward (Vf) (Max) @ If	1.3 V	1.3 - 980 V

Part	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Technology	Speed	Speed	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case
WeEn Semiconductors WND10P08XQ	TO-220F	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	1.3 V	800 V	10 µA	TO-220-2 Full Pack, Isolated Tab
WeEn Semiconductors WND10P08YQ	IITO-220-2	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	1.3 V	800 V	10 µA	TO-220-2
WeEn Semiconductors WND10M600XQ	TO-220F	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	980 mV	600 V	10 µA	TO-220-2 Full Pack, Isolated Tab