IXGK120N120B3

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IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 120A; 830W; TO264

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Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 120A; 830W; TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXGK120N120B3

Current - Collector (Ic) (Max) [Max]	200 A
Current - Collector Pulsed (Icm)	370 A
Gate Charge	470 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	830 W
Supplier Device Package	TO-264 (IXGK)
Switching Energy	5.5 mJ, 5.8 mJ
Td (on/off) @ 25°C	36 ns, 275 ns
Test Condition	100 A, 2 Ohm, 15 V, 600 V
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Supplier Device Package	Td (on/off) @ 25°C	Mounting Type	Gate Charge	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Switching Energy
IXYS IXGK120N120B3	TO-264 (IXGK)	36 ns 275 ns	Through Hole	470 nC	2 Ohm 15 V 100 A 600 V	-55 °C	150 °C	830 W	TO-264-3 TO-264AA	3 V	1200 V	PT	200 A	370 A	5.5 mJ 5.8 mJ
IXYS IXGK120N120A3	TO-264 (IXGK)	40 ns 490 ns	Through Hole	420 nC	1 Ohm 15 V 100 A 960 V	-55 °C	150 °C	830 W	TO-264-3 TO-264AA	2.2 V	1200 V	PT	240 A	600 A	10 mJ 33 mJ
IXYS IXGK120N60C2	TO-264 (IXGK)	40 ns 120 ns	Through Hole		1 Ohm 15 V 80 A 400 V	-55 °C	150 °C	830 W	TO-264-3 TO-264AA	2.5 V	600 V	PT	75 A	500 A	1 mJ 1.7 mJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 1200 V 200 A 830 W Through Hole TO-264 (IXGK)

Technical documentation and resources

No documents available