
BSC074N15NS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; SUPERSO8 5X6 PACKAGE; 7.4 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.

BSC074N15NS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; SUPERSO8 5X6 PACKAGE; 7.4 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC074N15NS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 114 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 214 W |
| Rds On (Max) @ Id, Vgs | 7.4 mOhm |
| Supplier Device Package | PG-TSON-8-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.85 | |
| 10 | $ 4.08 | |||
| 100 | $ 3.30 | |||
| 500 | $ 2.93 | |||
| 1000 | $ 2.51 | |||
| 2000 | $ 2.36 | |||
| Digi-Reel® | 1 | $ 4.85 | ||
| 10 | $ 4.08 | |||
| 100 | $ 3.30 | |||
| 500 | $ 2.93 | |||
| 1000 | $ 2.51 | |||
| 2000 | $ 2.36 | |||
| Tape & Reel (TR) | 5000 | $ 2.27 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 4.06 | |
| 10 | $ 2.95 | |||
| 25 | $ 2.67 | |||
| 50 | $ 2.39 | |||
| 100 | $ 2.11 | |||
| 250 | $ 1.93 | |||
| 500 | $ 1.79 | |||
| 1000 | $ 1.77 | |||
Description
General part information
BSC074 Series
Infineon'sOptiMOS™ MOSFETs in SuperSO8package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Documents
Technical documentation and resources