IRF830

Obsolete

STMicroelectronics

MOSFET N-CH 500V 4.5A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 500V 4.5A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF830

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	610 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
STMicroelectronics IRF830	4 V	10 V	MOSFET (Metal Oxide)	30 nC	150 °C	500 V	1.5 Ohm	Through Hole	610 pF	20 V	100 W	TO-220-3	N-Channel	4.5 A	TO-220

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 4.5A (Tc) 100W (Tc) Through Hole TO-220

Technical documentation and resources