TSM035NB04CZ

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Taiwan Semiconductor Corporation

40V, 157A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

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Taiwan Semiconductor Corporation

40V, 157A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

Specification	TSM035NB04CZ

Current - Continuous Drain (Id) @ 25°C	18 A, 157 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	6990 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	156 W, 2 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Taiwan Semiconductor Corporation TSM035NB04CZ	N-Channel	20 V	18 A 157 A	Through Hole	MOSFET (Metal Oxide)	2 W 156 W	3.5 mOhm	6990 pF	4 V	110 nC	TO-220-3	TO-220	40 V	-55 °C	150 °C

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General part information

N-Channel 40 V 18A (Ta), 157A (Tc) 2W (Ta), 156W (Tc) Through Hole TO-220

Technical documentation and resources