2SC2859-O(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 30V 0.5A SMINI

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 30V 0.5A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SC2859-O(TE85L,F)

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70 hFE
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Supplier Device Package	S-Mini
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Transistor Type	Mounting Type	Operating Temperature	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]
Toshiba Semiconductor and Storage 2SC2859-O(TE85L,F)	70 hFE	500 mA	S-Mini	30 V	SC-59 SOT-23-3 TO-236-3	NPN	Surface Mount	125 ¯C	300 MHz	250 mV	100 nA	150 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 30 V 500 mA 300MHz 150 mW Surface Mount S-Mini

Technical documentation and resources

No documents available