IPI110N20N3GAKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 200V 88A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 200V 88A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI110N20N3GAKSA1

Current - Continuous Drain (Id) @ 25°C	88 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	7100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPI110N20N3GAKSA1	88 A	N-Channel	MOSFET (Metal Oxide)	20 V	I2PAK TO-262-3 Long Leads TO-262AA	7100 pF	10 V	PG-TO262-3	4 V	200 V	11 mOhm	87 nC	Through Hole	300 W	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 88A (Tc) 300W (Tc) Through Hole PG-TO262-3

Technical documentation and resources