IXTQ90N15T

Obsolete

IXYS

MOSFET N-CH 150V 90A TO3P

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Obsolete

IXYS

MOSFET N-CH 150V 90A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ90N15T

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	4100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	455 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
IXYS IXTQ90N15T	90 A	20 mOhm	4.5 V	80 nC	N-Channel	Through Hole	SC-65-3 TO-3P-3	-55 °C	175 ░C	TO-3P	10 V	4100 pF	MOSFET (Metal Oxide)	30 V	150 V	455 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 90A (Tc) 455W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available