AOT3N60

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2.5A TO220

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2.5A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT3N60

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	3.5 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AOT3N60	2.5 A	-55 °C	150 °C	4.5 V	30 V	10 V	370 pF	12 nC	Through Hole	TO-220-3	MOSFET (Metal Oxide)	600 V	83 W	TO-220	N-Channel	3.5 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$