STV250N55F3

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STMicroelectronics

MOSFET N-CH 55V 200A 10POWERSO

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STMicroelectronics

MOSFET N-CH 55V 200A 10POWERSO

Technical Specifications

Parameters and characteristics for this part

Specification	STV250N55F3

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerSO-10 Exposed Bottom Pad
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	10-PowerSO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 55V 200A 10POWERSO

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STV250N55F3	100 nC	6800 pF	55 V	MOSFET (Metal Oxide)	10-PowerSO	-55 °C	175 ░C	PowerSO-10 Exposed Bottom Pad	Surface Mount	200 A	4 V	20 V	N-Channel	300 W	2.2 mOhm	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 200A (Tc) 300W (Tc) Surface Mount 10-PowerSO

Technical documentation and resources