LTE-R38386-S
ActiveDiodes Inc
EMITTER IR 850NM 1A SMD
Deep-Dive with AI
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LTE-R38386-S
ActiveDiodes Inc
EMITTER IR 850NM 1A SMD
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | LTE-R38386-S |
|---|---|
| Current - DC Forward (If) (Max) | 1 A |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Orientation | Top View |
| Package / Case | 2-SMD, No Lead Exposed Pad |
| Radiant Intensity (Ie) Min @ If | 160 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle [custom] | 90 ° |
| Voltage - Forward (Vf) (Typ) | 1.8 V |
| Wavelength | 850 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
LTE-R38386 Series
Infrared (IR) Emitter 850nm 1.8V 1A 160mW/sr @ 1A 90° 2-SMD, No Lead Exposed Pad
Documents
Technical documentation and resources