Specification	GD25LE64ELIGR

Access Time	6 ns
Clock Frequency	133 MHz
Memory Depth	8 M
Memory Format	FLASH
Memory Interface (Type)	QPI, SPI - Quad I/O
Memory Size	64 Mbit
Memory Type	Non-Volatile
Memory Width	8 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package / Case	16-XFBGA, WLCSP
Package Name	16-WLCSP
Technology	FLASH - NOR (SLC)
Voltage - Supply (Maximum)	2 V
Voltage - Supply (Minimum)	1.65 V
Write Cycle Time - Page	2.4 ms
Write Cycle Time - Word	60 µs

GD25LE64 Series

Part	Access Time	Package Length	Package Name	Package Width	Memory Type	Memory Width	Memory Depth	Clock Frequency	Memory Format	Operating Temperature (Max)	Operating Temperature (Min)	Memory Interface (Type)	Memory Size	Technology	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Write Cycle Time - Page	Write Cycle Time - Word	Package / Case
GigaDevice Semiconductor (HK) Limited GD25LE64ESIGY	6 ns	0.209 in	8-SOIC 8-SOP	5.3 mm	Non-Volatile	8 bit	8 M	133 MHz	FLASH	85 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	2.4 ms	60 µs
GigaDevice Semiconductor (HK) Limited GD25LE64ESIGR	6 ns	0.209 in	8-SOIC 8-SOP	5.3 mm	Non-Volatile	8 bit	8 M	133 MHz	FLASH	85 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	2.4 ms	60 µs
GigaDevice Semiconductor (HK) Limited GD25LE64EXEEGR	6 ns	3 mm	8-FO-USON	2 mm	Non-Volatile	8 bit	8 M	133 MHz	FLASH	125 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	4 ms	100 µs	8-XFDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LE64ELIGR	6 ns		16-WLCSP		Non-Volatile	8 bit	8 M	133 MHz	FLASH	85 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	2.4 ms	60 µs	16-XFBGA WLCSP
GigaDevice Semiconductor (HK) Limited GD25LE64EQIGR	6 ns	4 mm	8-USON	4 mm	Non-Volatile	8 bit	8 M	133 MHz	FLASH	85 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	2.4 ms	60 µs	8-XDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LE64EWIGR	6 ns	5 mm	8-WSON	6 mm	Non-Volatile	8 bit	8 M	133 MHz	FLASH	85 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	2.4 ms	60 µs	8-WDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LE64ENEGR	6 ns	3 mm	8-USON	4 mm	Non-Volatile	8 bit	8 M	133 MHz	FLASH	125 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	4 ms	100 µs	8-UDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LE64E3IGR	6 ns		8-WLCSP		Non-Volatile	8 bit	8 M	133 MHz	FLASH	85 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	2.4 ms	60 µs	8-XFBGA WLCSP
GigaDevice Semiconductor (HK) Limited GD25LE64ETIGR	6 ns	0.154 in	8-SOIC 8-SOP	3.9 mm	Non-Volatile	8 bit	8 M	133 MHz	FLASH	85 °C	-40 °C	QPI SPI - Quad I/O	64 Mbit	FLASH - NOR (SLC)	1.65 V	2 V	Surface Mount	2.4 ms	60 µs

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GD25LE64ELIGR | Datasheet