AONX38168

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 25A/62A 8DFN

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 25A/62A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AONX38168

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	25 A, 50 A, 62 A, 85 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	24 nC, 85 nC
Input Capacitance (Ciss) (Max) @ Vds	4520 pF, 1150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power - Max	69 W, 3.2 W, 20 W, 3.1 W
Rds On (Max) @ Id, Vgs	0.8 mOhm, 3.3 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.9 V, 1.8 V

Part	Configuration	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Drain to Source Voltage (Vdss)	Power - Max	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AONX38168	2 N-Channel (Dual) Asymmetrical	25 A 50 A 62 A 85 A	MOSFET (Metal Oxide)	8-VDFN Exposed Pad	25 V	3.1 W 3.2 W 20 W 69 W	1.8 V 1.9 V	8-DFN (5x6)	-55 °C	150 °C	0.8 mOhm 3.3 mOhm	1150 pF 4520 pF	Surface Mount	24 nC 85 nC

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General part information

Mosfet Array 25V 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Surface Mount 8-DFN (5x6)

Technical documentation and resources

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