IPB06N03LB

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Infineon Technologies

MOSFET N-CH 30V 50A D2PAK

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Unknown

Infineon Technologies

MOSFET N-CH 30V 50A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB06N03LB

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	2782 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Technology	Supplier Device Package
Infineon Technologies IPB06N03LB	30 V	50 A	-55 °C	175 ░C	6.3 mOhm	4.5 V 10 V	22 nC	2 V	Surface Mount	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2782 pF	83 W	N-Channel	MOSFET (Metal Oxide)
Infineon Technologies IPB06N03LA G	25 V	50 A	-55 °C	175 ░C	5.9 mOhm	4.5 V 10 V	22 nC	2 V	Surface Mount	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2653 pF	83 W	N-Channel	MOSFET (Metal Oxide)	PG-TO263-3-2
Infineon Technologies IPB06N03LB G	30 V	50 A	-55 °C	175 ░C	6.3 mOhm	4.5 V 10 V	22 nC	2 V	Surface Mount	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2782 pF	83 W	N-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 50A (Tc) 83W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources