IXTT60N20L2

Active

IXYS

MOSFET N-CH 200V 60A TO268

Search across all available documentation for this part.

Active

IXYS

MOSFET N-CH 200V 60A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT60N20L2

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	255 nC
Input Capacitance (Ciss) (Max) @ Vds	10500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	540 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
IXYS IXTT60N20L2	4.5 V	255 nC	TO-268AA	45 mOhm	MOSFET (Metal Oxide)	10 V	60 A	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	Surface Mount	-55 °C	150 °C	20 V	N-Channel	540 W	10500 pF	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 60A (Tc) 540W (Tc) Surface Mount TO-268AA

Technical documentation and resources

No documents available