2DB1132R-13

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Diodes Inc

TRANS GP BJT PNP 32V 1A 4-PIN(3+TAB) SOT-89 T/R

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Diodes Inc

TRANS GP BJT PNP 32V 1A 4-PIN(3+TAB) SOT-89 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2DB1132R-13

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	190 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Supplier Device Package	SOT-89-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

PNP, 32V, 1A, SOT89

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Power - Max [Max]
Diodes Inc 2DB1132P-13	PNP	82	1 A	-55 °C	150 °C	500 nA	500 mV	Surface Mount	TO-243AA	SOT-89-3	32 V	190 MHz	1 W
Diodes Inc 2DB1132R-13	PNP	180 hFE	1 A	-55 °C	150 °C	500 nA	500 mV	Surface Mount	TO-243AA	SOT-89-3	32 V	190 MHz	1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 32V, 1A, SOT89

Technical documentation and resources