BYC58X-600,127

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WeEn Semiconductors

DIODE GEN PURP 600V 8A TO220FP

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WeEn Semiconductors

DIODE GEN PURP 600V 8A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	BYC58X-600,127

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	150 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	12.5 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220FP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	3.2 V

DIODE GEN PURP 600V 8A TO220FP

Part	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	Speed	Technology	Supplier Device Package	Current - Average Rectified (Io)
WeEn Semiconductors BYC58X-600,127	Through Hole	150 µA	150 °C	3.2 V	600 V	12.5 ns	TO-220-2 Full Pack, Isolated Tab	200 mA, 500 ns	Standard	TO-220FP	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Through Hole TO-220FP

Technical documentation and resources

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