STB22NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 16A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 16A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB22NM60N

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	220 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STB22NM60N	220 mOhm	44 nC	600 V	4 V	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	16 A	1300 pF	TO-263 (D2PAK)	10 V	MOSFET (Metal Oxide)	30 V	Surface Mount	125 W
STMicroelectronics STB22N60M6	230 mOhm		600 V	4.75 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	15 A		TO-263 (D2PAK)	10 V	MOSFET (Metal Oxide)	25 V	Surface Mount	130 W	20 nC	-55 °C	150 °C	800 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 16A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources