BU508AFI

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STMicroelectronics

TRANS NPN 700V 8A ISOWATT-218FX

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STMicroelectronics

TRANS NPN 700V 8A ISOWATT-218FX

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BU508AFI	BU508 Series

	-	-
Current - Collector (Ic) (Max) [Max]	8 A	8 A
Current - Collector Cutoff (Max) [Max]	1 mA	1 - 200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	-	10
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	ISOWATT-218-3	ISOWATT-218-3, TO-247-3, TO-3P-3 Full Pack
Power - Max [Max]	50 W	50 W
Supplier Device Package	ISOWATT-218FX	ISOWATT-218FX, TO-247-3, TO-3PF
Transistor Type	NPN	NPN
Vce Saturation (Max) @ Ib, Ic	1 V	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	700 V	700 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

TRANS NPN 700V 8A ISOWATT-218FX

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Transistor Type	Power - Max [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
STMicroelectronics BU508AFI	700 V	ISOWATT-218FX	NPN	50 W	150 °C	8 A	ISOWATT-218-3	1 mA	1 V	Through Hole
STMicroelectronics BU508AW	700 V	TO-247-3	NPN		150 °C	8 A	TO-247-3	200 µA	1 V	Through Hole	10
STMicroelectronics BU508AF
STMicroelectronics BU508AF	700 V	TO-3PF	NPN	50 W	150 °C	8 A	TO-3P-3 Full Pack	200 µA	1 V	Through Hole	10
STMicroelectronics BU508AW
STMicroelectronics BU508AF
STMicroelectronics BU508AW

General part information

Bipolar (BJT) Transistor NPN 700 V 8 A 7MHz 50 W Through Hole ISOWATT-218FX

Technical documentation and resources