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TO-220-F

STF25N60M2-EP

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STMicroelectronics

N-CHANNEL 600 V, 0.175 OHM TYP., 18 A MDMESH M2 EP POWER MOSFET IN A TO-220FP PACKAGE

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TO-220-F

STF25N60M2-EP

Active
STMicroelectronics

N-CHANNEL 600 V, 0.175 OHM TYP., 18 A MDMESH M2 EP POWER MOSFET IN A TO-220FP PACKAGE

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Description

General part information

STF25 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF25N60M2-EP
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)29 nC
Input Capacitance (Ciss) (Max)1090 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FP
Power Dissipation (Max)30 W
Rds On (Max)188 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4.75 V

Pricing

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CAD

3D models and CAD resources for this part