Specification	SQ4153EY-T1_GE3

Current - Continuous Drain (Id) (Tc)	25 A, 25 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	151 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	11000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	7.1 W
Qualification	AEC-Q101
Rds On (Max)	8.32 mOhm, 8.32 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	900 mV

SQ4153 Series

Part	Mounting Type	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Gate Charge (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Width	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Grade	Vgs (Max)	FET Type	Technology	Qualification	Drain to Source Voltage (Vdss)
Vishay Dale SQ4153EY-T1_GE3	Surface Mount	900 mV	11000 pF	7.1 W	151 nC	8-SOIC	4.5 V	1.8 V	-55 °C	175 °C	0.154 in	3.9 mm	25 A 25 A	8.32 mOhm 8.32 mOhm	Automotive	8 V	P-Channel	MOSFET (Metal Oxide)	AEC-Q101	12 V
Vishay Dale SQ4153EY-T1_BE3	Surface Mount	900 mV	11000 pF	7.1 W	151 nC	8-SOIC	4.5 V	1.8 V	-55 °C	175 °C	0.154 in	3.9 mm	25 A 25 A	8.32 mOhm 8.32 mOhm	Automotive	8 V	P-Channel	MOSFET (Metal Oxide)	AEC-Q101	12 V

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