IXFR24N90Q

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IXYS

MOSFET N-CH 900V ISOPLUS247

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IXYS

MOSFET N-CH 900V ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Part	Package / Case	Supplier Device Package	Mounting Type	Technology	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXFR24N90Q	TO-247-3	ISOPLUS247™	Through Hole	MOSFET (Metal Oxide)	N-Channel	900 V
IXYS IXFR24N50	TO-247-3	ISOPLUS247™	Through Hole	MOSFET (Metal Oxide)	N-Channel	500 V	250 W	230 mOhm	20 V	4 V	24 A	4200 pF	160 nC	-55 °C	150 °C	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V Through Hole ISOPLUS247™

Technical documentation and resources

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