Specification	IDK12G65C5XTMA1

Capacitance	360 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage	2.1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.8 V, 1.8 V

IDK12G65 Series

Part	Technology	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Package / Case	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Reverse Leakage	Package Name	Mounting Type	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance
INFINEON IDK12G65C5XTMA1	SiC (Silicon Carbide) Schottky	1.8 V 1.8 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C	2.1 mA	PG-TO263-2	Surface Mount	0 ns	12 A	360 pF
INFINEON IDK12G65C5XTMA2	SiC (Silicon Carbide) Schottky	1.8 V 1.8 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C		PG-TO263-2	Surface Mount	0 ns	12 A	360 pF

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