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PN918 TIN/LEAD

PN918 TIN/LEAD

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Central Semiconductor Corp

RF BIPOLAR TRANSISTORS NPN 30VCBO 15VCEO 3VEBO 50MA 200MW

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PN918 TIN/LEAD

PN918 TIN/LEAD

Active
Central Semiconductor Corp

RF BIPOLAR TRANSISTORS NPN 30VCBO 15VCEO 3VEBO 50MA 200MW

Find alt

Description

General part information

PN918 Series

RF BIPOLAR TRANSISTORS NPN 30VCBO 15VCEO 3VEBO 50MA 200MW

Technical Specifications

Parameters and characteristics for this part

SpecificationPN918 TIN/LEAD
Current - Collector (Ic) (Max)0.05 mA
DC Current Gain (hFE) (Min)20
Gain15 dB
Mounting TypeThrough Hole
Noise Figure (Typical)6 dB
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92-3
Power - Max625 mW
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15 V

Pricing

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CAD

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Documents

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