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IST007N04NM6AUMA1

IST007N04NM6AUMA1

Obsolete
INFINEON

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; STOLL HSOF-5 PACKAGE; 0.7 MOHM;

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IST007N04NM6AUMA1

IST007N04NM6AUMA1

Obsolete
INFINEON

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; STOLL HSOF-5 PACKAGE; 0.7 MOHM;

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Description

General part information

IST007 Series

TheOptiMOS™ 6 power MOSFET40V insTOLLpackage features very low RDS(on)of 0.70mOhm and 440A high current capability. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, battery protection and battery formation. The improved RDS(on)and IDratings, continuous and pulsed, enable increased battery run time and higher power density.

Technical Specifications

Parameters and characteristics for this part

SpecificationIST007N04NM6AUMA1
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)152 nC
Input Capacitance (Ciss) (Max)7900 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case5-PowerSFN
Package NamePG-HSOF-5-4
Power Dissipation (Max)3.8 W, 250 W
Rds On (Max)0.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part