IPB60R385CPATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 9A TO263-3

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IPB60R385CPATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 9A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R385CPATMA1

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs [Max]	385 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPB60R Series

Part	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPB60R385CPATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	83 W	9 A	20 V	600 V	22 nC	MOSFET (Metal Oxide)	385 mOhm	Surface Mount	N-Channel	PG-TO263-3-2	790 pF	-55 °C	150 °C	10 V	3.5 V
Infineon Technologies IPB60R190P6ATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		20.2 A	20 V	600 V		MOSFET (Metal Oxide)		Surface Mount	N-Channel		1750 pF	-55 °C	150 °C	10 V	4.5 V	190 mOhm	151 W
Infineon Technologies IPB60R600C6ATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	63 W	7.3 A	20 V	600 V	20.5 nC	MOSFET (Metal Oxide)		Surface Mount	N-Channel			-55 °C	150 °C	10 V	3.5 V	600 mOhm		440 pF
Infineon Technologies IPB60R600P6ATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	63 W	7.3 A	20 V	600 V	12 nC	MOSFET (Metal Oxide)		Surface Mount	N-Channel			-55 °C	150 °C	10 V	4.5 V	600 mOhm		557 pF
Infineon Technologies IPB60R600CPATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 W	6.1 A	20 V	600 V	27 nC	MOSFET (Metal Oxide)		Surface Mount	N-Channel		550 pF	-55 °C	150 °C	10 V	3.5 V	600 mOhm
Infineon Technologies IPB60R230P6ATMA1	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	126 W	16.8 A	20 V	600 V		MOSFET (Metal Oxide)		Surface Mount	N-Channel	PG-TO263-3-1		-55 °C	150 °C	10 V	4.5 V	230 mOhm		1450 pF	31 nC
Infineon Technologies IPB60R299CPATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	96 W	11 A	20 V	600 V		MOSFET (Metal Oxide)		Surface Mount	N-Channel	PG-TO263-3-2		-55 °C	150 °C	10 V	3.5 V	299 mOhm			29 nC
Infineon Technologies IPB60R330P6ATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	93 W	12 A	20 V	600 V	22 nC	MOSFET (Metal Oxide)		Surface Mount	N-Channel			-55 °C	150 °C	10 V		330 mOhm		1010 pF
Infineon Technologies IPB60R250CPATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	104 W	12 A	20 V	600 V	35 nC	MOSFET (Metal Oxide)		Surface Mount	N-Channel	PG-TO263-3-2		-55 °C	150 °C	10 V	3.5 V	250 mOhm		1200 pF
Infineon Technologies IPB60R520CPATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	66 W	6.8 A	20 V	600 V		MOSFET (Metal Oxide)	520 mOhm	Surface Mount	N-Channel			-55 °C	150 °C	10 V	3.5 V			630 pF	31 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB60R Series

N-Channel 600 V 9A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources