CUS10S30,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 20 V/1 A SCHOTTKY BARRIER DIODE, SOD-323(USC)
CUS10S30,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 20 V/1 A SCHOTTKY BARRIER DIODE, SOD-323(USC)
Description
General part information
CUS10S30 Series
Diodes, 20 V/1 A Schottky Barrier Diode, SOD-323(USC)
Technical Specifications
Parameters and characteristics for this part
| Specification | CUS10S30,H3F |
|---|---|
| Capacitance | 135 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage | 500 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 125 °C |
| Package / Case | SC-76, SOD-323 |
| Package Name | USC |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) | 230 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
CUS10S30,H3F | Datasheet
Mini catalog Introduction of Toshiba diode lineup for Industries
Basics of Diodes (Types and Overview of Diodes)
Thermal Design for Schottky Barrier Diodes (SBDs) in the US2H Package
Basics of Diodes (Power Losses and Thermal Design)
Mini catalog Toshiba's circuit protection solutions and switch solutions
CUS10S30 Data sheet/Japanese
Selection Guide Small Signal 2025 Rev1.0
Selecting a Schottky Barrier Diode for Voltage Boost Circuits
Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)