Specification	IRFD420PBF

Current - Continuous Drain (Id) (Ta)	370 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Input Capacitance (Ciss) (Max)	360 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-DIP, 4-HVMDIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFD420 Series

Part	FET Type	Current - Continuous Drain (Id) (Ta)	Package Width	Package Name	Package Length	Vgs(th) (Max)	Power Dissipation (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Rds On (Max)
Vishay Dale IRFD420	N-Channel	370 mA	7.62 mm	4-DIP 4-HVMDIP	0.3 in	4 V	1 W	MOSFET (Metal Oxide)	-55 °C	150 °C	24 nC 24 nC	500 V	10 V	20 V	360 pF	Through Hole	3 Ohm
Vishay Dale IRFD420PBF	N-Channel	370 mA	7.62 mm	4-DIP 4-HVMDIP	0.3 in	4 V	1 W	MOSFET (Metal Oxide)	-55 °C	150 °C	24 nC 24 nC	500 V	10 V	20 V	360 pF	Through Hole	3 Ohm

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