Specification	UPA2735GR-E1-AT

Current - Continuous Drain (Id) (Ta)	16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	195 nC
Input Capacitance (Ciss) (Max)	6250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package Length	0.173 in
Package Name	8-PowerSOIC, 8-SOP
Package Width	4.4 mm
Power Dissipation (Max)	1.1 W
Rds On (Max)	5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

UPA2735GR Series

Pch Power MOSFET -30V -16A 5mohm SOP-8 / SOIC-8

Part	Technology	Mounting Type	FET Type	Operating Temperature	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Package Name	Package Length	Package Width	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)	Vgs (Max)
Renesas Electronics Corporation UPA2735GR-E1-AT	MOSFET (Metal Oxide)	Surface Mount	P-Channel	150 °C	16 A	10 V	4.5 V	30 V	8-PowerSOIC 8-SOP	0.173 in	4.4 mm	195 nC	6250 pF	1.1 W	5 mOhm	20 V
Renesas Electronics Corporation UPA2735GR-E1-AX	MOSFET (Metal Oxide)	Surface Mount	P-Channel	150 °C	16 A	10 V	4.5 V	30 V	8-SOIC 8-SOP	0.154 in	3.9 mm	195 nC	6250 pF	2.5 W	5 mOhm	20 V

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