Specification	IRF830L

Current - Continuous Drain (Id) (Tc)	4.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	610 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	I2PAK
Power Dissipation (Max)	74 W, 3.1 W
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF830 Series

Part	Gate Charge (Max)	Rds On (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max)
Vishay Dale IRF830PBF	38 nC	1.5 Ohm	74 W	500 V	20 V	4.5 A	TO-220AB	N-Channel	-55 °C	150 °C	Through Hole	610 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	4 V
Vishay Dale IRF830	38 nC	1.5 Ohm	74 W	500 V	20 V	4.5 A	TO-220AB	N-Channel	-55 °C	150 °C	Through Hole	610 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	4 V
Vishay Dale IRF830L	38 nC	1.5 Ohm	3.1 W 74 W	500 V	20 V	4.5 A	I2PAK	N-Channel	-55 °C	150 °C	Through Hole	610 pF	I2PAK TO-262-3 Long Leads TO-262AA	10 V	MOSFET (Metal Oxide)	4 V
Vishay Dale IRF830A	24 nC 24 nC	1.4 Ohm	74 W	500 V	30 V	5 A	TO-220AB	N-Channel	-55 °C	150 °C	Through Hole	620 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	4.5 V
Vishay Dale IRF830AL	24 nC 24 nC	1.4 Ohm	3.1 W 74 W	500 V	30 V	5 A	I2PAK	N-Channel	-55 °C	150 °C	Through Hole	620 pF	I2PAK TO-262-3 Long Leads TO-262AA	10 V	MOSFET (Metal Oxide)	4.5 V
Vishay Dale IRF830PBF-BE3	38 nC	1.5 Ohm	74 W	500 V	20 V	4.5 A	TO-220AB	N-Channel	-55 °C	150 °C	Through Hole	610 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	4 V
Vishay Dale IRF830SPBF	38 nC	1.5 Ohm	3.1 W 74 W	500 V	20 V	4.5 A	TO-263 (D2PAK)	N-Channel	-55 °C	150 °C	Surface Mount	610 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	4 V
Vishay Dale IRF830APBF-BE3	24 nC 24 nC	1.4 Ohm	74 W	500 V	30 V	5 A	TO-220AB	N-Channel	-55 °C	150 °C	Through Hole	620 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	4.5 V
Vishay Dale IRF830BPBF-BE3	20 nC	1.5 Ohm	104 W	500 V	30 V	5.3 A	TO-220AB	N-Channel	-55 °C	150 °C	Through Hole	325 pF	TO-220-3		MOSFET (Metal Oxide)	5 V
Vishay Dale IRF830LPBF	38 nC	1.5 Ohm	3.1 W 74 W	500 V	20 V	4.5 A	TO-262-3	N-Channel	-55 °C	150 °C	Through Hole	610 pF	I2PAK TO-262-3 Long Leads TO-262AA	10 V	MOSFET (Metal Oxide)	4 V

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IRF830L | Datasheet