Specification	SI3812DV-T1-E3

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Max)	4 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	830 mW
Rds On (Max)	125 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	600 mV

SI3812 Series

Part	Package / Case	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	FET Feature	FET Type	Vgs (Max)	Technology	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Mounting Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Vishay Dale SI3812DV-T1-E3	SOT-23-6 Thin TSOT-23-6	4 nC	2.5 V	4.5 V	Schottky Diode (Isolated)	N-Channel	12 V	MOSFET (Metal Oxide)	600 mV	2 A	-55 °C	150 °C	6-TSOP	Surface Mount	125 mOhm	20 V	830 mW
Vishay Dale SI3812DV-T1-GE3	SOT-23-6 Thin TSOT-23-6	4 nC	2.5 V	4.5 V	Schottky Diode (Isolated)	N-Channel	12 V	MOSFET (Metal Oxide)	600 mV	2 A	-55 °C	150 °C	6-TSOP	Surface Mount	125 mOhm	20 V	830 mW

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