Specification	IRFD9220PBF

Current - Continuous Drain (Id) (Ta)	560 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	340 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-HVMDIP, 4-DIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFD9220 Series

Part	Technology	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Gate Charge (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Package Width	Package Length
Vishay Dale IRFD9220	MOSFET (Metal Oxide)	1 W	P-Channel	560 mA	4 V	15 nC	1.5 Ohm	10 V	200 V	-55 °C	150 °C	4-DIP 4-HVMDIP	20 V	Through Hole	340 pF	7.62 mm	0.3 in
Vishay Dale IRFD9220PBF	MOSFET (Metal Oxide)	1 W	P-Channel	560 mA	4 V	15 nC	1.5 Ohm	10 V	200 V	-55 °C	150 °C	4-DIP 4-HVMDIP	20 V	Through Hole	340 pF	7.62 mm	0.3 in

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