P2000DL45X168APTHPSA1

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Infineon Technologies

IGBT TRANSISTORS / MODULES ROHS

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Infineon Technologies

IGBT TRANSISTORS / MODULES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	P2000DL45X168APTHPSA1

Configuration	Single
Current - Collector (Ic) (Max) [Max]	2000 A
Current - Collector Cutoff (Max) [Max]	200 µA
IGBT Type	Trench
Input	Standard
Input Capacitance (Cies) @ Vce	420 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DO-200AE
Supplier Device Package	BG-P16826K-1
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max)	4500 V

Part	Package / Case	Supplier Device Package	Mounting Type	Input	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	NTC Thermistor	Vce(on) (Max) @ Vge, Ic	Configuration	Current - Collector Cutoff (Max) [Max]	Input Capacitance (Cies) @ Vce
Infineon Technologies P2000DL45X168APTHPSA1	DO-200AE	BG-P16826K-1	Chassis Mount	Standard	150 °C	-40 °C	Trench	4500 V	2000 A		2.5 V	Single	200 µA	420 nF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module Trench Single 4500 V 2000 A Chassis Mount BG-P16826K-1

Technical documentation and resources