Specification	SICAC0860P-TP

Capacitance	346 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage	36 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	DFN5060
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.6 V

SICAC0860 Series

Part	Current - Average Rectified (Io)	Current - Reverse Leakage	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - Forward (Vf) (Max)	Capacitance	Voltage - DC Reverse (Vr) (Max)	Technology	Package Name	Reverse Recovery Time (trr)	Mounting Type	Package / Case
MCC (Micro Commercial Components) SICAC0860P-TP	8 A	36 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C	1.6 V	346 pF	650 V	SiC (Silicon Carbide) Schottky	DFN5060	0 ns	Surface Mount	8-PowerTDFN
MCC (Micro Commercial Components) SICAC0860P-TP	8 A	36 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C	1.6 V	346 pF	650 V	SiC (Silicon Carbide) Schottky	DFN5060	0 ns	Surface Mount	8-PowerTDFN

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