PSC1065J-QJ
Active650 V, 10 A SIC SCHOTTKY DIODE IN D2PAK R2P FOR AUTOMOTIVE APPLICATIONS
PSC1065J-QJ
Active650 V, 10 A SIC SCHOTTKY DIODE IN D2PAK R2P FOR AUTOMOTIVE APPLICATIONS
Description
General part information
PSC1065J-Q Series
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSC1065J-QJ |
|---|---|
| Capacitance | 340 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 60 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | Variant, TO-263-3, D2PAK (2 Leads + Tab) |
| Package Name | D2PAK R2P |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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