Specification	SI4434ADY-T1-GE3

Current - Continuous Drain (Id) (Ta)	2.8 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	16.5 nC
Input Capacitance (Ciss) (Max)	600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SO
Package Width	3.9 mm
Power Dissipation (Max)	2.9 W, 6 W
Rds On (Max)	150 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI4434 Series

Part	FET Type	Rds On (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Width	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Mounting Type	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Input Capacitance (Ciss) (Max)
Vishay Dale SI4434DY-T1-GE3	N-Channel	155 mOhm	50 nC	-55 °C	150 °C	0.154 in	8-SOIC	3.9 mm	1.56 W	20 V	2.1 A	250 V	4 V	Surface Mount	MOSFET (Metal Oxide)	6 V	10 V
Vishay Dale SI4434ADY-T1-GE3	N-Channel	150 mOhm	16.5 nC	-55 °C	150 °C	0.154 in	8-SO 8-SOIC	3.9 mm	2.9 W 6 W	20 V	2.8 A	250 V	4 V	Surface Mount	MOSFET (Metal Oxide)	7.5 V	10 V	600 pF

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