Specification	SI4845DY-T1-E3

Current - Continuous Drain (Id) (Tc)	2.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Max)	4.5 nC
Input Capacitance (Ciss) (Max)	312 pF, 312 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.75 W, 2.75 W
Rds On (Max)	210 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

SI4845 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Vgs(th) (Max)	Gate Charge (Max)	FET Feature	Technology	Mounting Type	Package Length	Package Width
Vishay Dale SI4845DY-T1-E3	-55 °C	150 °C	8-SOIC	1.75 W 2.75 W	12 V	20 V	P-Channel	2.5 V	4.5 V	312 pF 312 pF	2.7 A	210 mOhm	1.5 V	4.5 nC	Schottky Diode (Isolated)	MOSFET (Metal Oxide)	Surface Mount	0.154 in	3.9 mm

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