Specification	SSM3J328R,LF

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	12.8 nC
Input Capacitance (Ciss) (Max)	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Package Name	SOT-23F
Power Dissipation (Max)	1 W
Rds On (Max)	29.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SSM3J328R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0298 Ω@4.5V, SOT-23F

Part	Gate Charge (Max)	Vgs(th) (Max)	Operating Temperature	Current - Continuous Drain (Id) (Ta)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Rds On (Max)	Technology	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs (Max)
Toshiba Semiconductor and Storage SSM3J328R,LF	12.8 nC	1 V	150 °C	6 A	Surface Mount	20 V	SOT-23-3 Flat Leads	4.5 V	1.5 V	P-Channel	29.8 mOhm	MOSFET (Metal Oxide)	SOT-23F	840 pF	1 W	8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources