TK090N65Z,S1F
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.09 Ω@10V, TO-247, DTMOSⅥ
TK090N65Z,S1F
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.09 Ω@10V, TO-247, DTMOSⅥ
Description
General part information
TK090N65Z Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.09 Ω@10V, TO-247, DTMOSⅥ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK090N65Z,S1F |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 30 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 47 nC |
| Input Capacitance (Ciss) (Max) | 2780 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power Dissipation (Max) | 230 W |
| Rds On (Max) | 90 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Electrical Characteristics: Power MOSFET Application Notes
MOSFET SPICE model grade
Motor Control (Vacuum Cleaners)
Resonant Circuits and Soft Switching
MOSFET Self-Turn-On Phenomenon
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Avalanche energy calculation
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
TK090N65Z Data sheet/English
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
TK090N65Z Data sheet/Japanese
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Structures and Characteristics: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Selection Guide MOSFETs 2025 Rev1.0
Simplified CFD Model Application Note
Derating of the MOSFET Safe Operating Area
Calculating the Temperature of Discrete Semiconductor Devices
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3