Specification	IPI45N06S4L08AKSA3

Current - Continuous Drain (Id) (Tc)	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	64 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4780 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	PG-TO262-3-1
Power Dissipation (Max)	71 W
Qualification	AEC-Q101
Rds On (Max)	8.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.2 V

IPI45N Series

Part	Qualification	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Gate Charge (Max)	Rds On (Max)	Package / Case	Vgs (Max)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade	Input Capacitance (Ciss) (Max)	Mounting Type	Technology	Package Name	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IPI45N06S4L08AKSA3	AEC-Q101	45 A	60 V	-55 °C	175 °C	N-Channel	64 nC	8.2 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	16 V	2.2 V	10 V	4.5 V	Automotive	4780 pF	Through Hole	MOSFET (Metal Oxide)	PG-TO262-3-1	71 W
INFINEON IPI45N06S409AKSA1	AEC-Q101	45 A	60 V	-55 °C	175 °C	N-Channel	47 nC	9.4 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	20 V	4 V			Automotive	3785 pF	Through Hole	MOSFET (Metal Oxide)	PG-TO262-3	71 W	10 V

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