Specification	SI4421DY-T1-E3

Current - Continuous Drain (Id) (Ta)	10 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	125 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.5 W
Rds On (Max)	8.75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	800 mV

SI4421 Series

Part	Vgs(th) (Max)	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package Name	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Package Length	Package Width	Gate Charge (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology
Vishay Dale SI4421DY-T1-GE3	800 mV	P-Channel	1.5 W	20 V	8-SOIC	10 A	8 V	0.154 in	3.9 mm	125 nC	Surface Mount	4.5 V	1.8 V	8.75 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)
Vishay Dale SI4421DY-T1-E3	800 mV	P-Channel	1.5 W	20 V	8-SOIC	10 A	8 V	0.154 in	3.9 mm	125 nC	Surface Mount	4.5 V	1.8 V	8.75 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)

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